李来自铸国 ，上海交通大学材料科学与工程学院教授。1972年9月出生。1994年毕业于上海交通大学，获双学士学位;1997年同校获硕士学位，并留校工作。

• 中文名称 李铸国
• 国籍 中国
• 出生日期 1972年
• 毕业院校 上海交通大学

人物简介

　　2001-2004年留学日本大阪大学，获博士学位。2005-2007年作来自为日本学术振兴会特别研究员(JSPS FELLOW)在日本近畿大学和大阪大学从事合作研究。主要从事激光焊接与表面工程方面的研究。获上海市科技进步奖一等奖1项，上海市发明专利奖一稳置叫初增免等奖1项，中国机械工业科技进步奖三等级1项。在国内外刊物发表论文50多篇。

代表性论著

　　1.Z.G. Li, S. Miyake, Characteristics of N-doped TiO2 thin fil360百科ms grown on unheated glass substrate by inductively coupled plasma assisted dc reactive magnetron sputtering, Appli在杆脸结欢经油将材象管ed Surface Science, 255(2009)9149.

　　2.Z.G. Li, Y.X. Wu, S. Miyake, Metallic sputtering growth of high quality anatase phase TiO2 films by inductively coupled plasma assisted DC reactive magnetron sputtering, Surface and Coating Technology, 203 (2009) 36值高牛61.

　　3.J.M. Ni, Z.G. Li, Y. Cai, J. Huang, Y.X. Wu. Mechanical Property and Micro土剂品尼structure of 厚延刻府起HSLA Steel Laser Hyb烟rid Welded Join油绝t. 62nd IIW Annual Assembly and International Conference. Singapore, July 2009.

　　4.Z.G. Li, S. Miy罗往哪盐歌后势阿现天在ake, M. Makino, Y.X. Wu, Metallic sputtering growth of crystalline titanium oxide films on unheated g缺义站缩衣标头仍害lass substrate using inductively coupled plasma assisted direct current magnetron spu植打亲ttering, Thin Solid Films, 517 (化反财2008) 699.

　　5.Z.G. Li, Y.X. Wu, S. Mi数非yake, High-走丰助易弱坚密报组下flux ion irradiation with energy of ~20 eV affecting ph副继ase segregationand lo体广赶白危冷少w-temperature growth of nc-TiN/a-Si3N4 nanocomposite films, Journal of Vacuum Science and Technology A 25 (2007) 1524.

　　6.Zhuguo LI, Shoji MIYAKE, Y成医ixiong WU, Effect of Low-E唱顾雷农孔官后nergy Ion Flux Irradiation on Synthesis of Superhard Nanocomposite Films, Japanes拿贵对位然始案采三范e Journal of Applied Physics, 45 (2006) 7866.

　　7.Zhuguo LI, Shoji MIYAKE, Yixiong WU, Effects of copper doping on structure and properties of TiN films prepared by magnetron sputtering assisted by low energy ion flux irradiation, Japanese Journal of Applied Physics, 45 (2006) 5178.

　　8.Z.G. Li, M. Mori, S. Miyake, M. Kumagai, H. Saito and Y. Muramatsu,Structure and properties of Ti–Si–N films prepared by ICP assisted magnetron sputtering, Surface and Coatings Technology, 193 (2005) 345.